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Tatusky TTSK‑TZ‑KPG‑100W

By Tatusky Technology Co., Ltd ↗

The Tatusky TTSK‑TZ‑KPG‑100W is a GaN RF amplifier module for anti-drone systems, covering 4000‑8000 MHz with typical 100W saturated output measured at 25℃ ambient. Its screw-mounted assembly provides SMA-Female input, N-Female output, RS485 monitoring and TTL configuration, and requires suitable DC power and bottom-mounted cooling.

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Tatusky TTSK‑TZ‑KPG‑100W RF amplifier module with silver metal housing, wires and RF connector
Tatusky TTSK‑TZ‑KPG‑100W RF amplifier module with silver metal housing, wires and RF connector
ModelTatusky TTSK‑TZ‑KPG‑100W
Product architectureGaN-based microwave RF power amplifier module
Frequency band100W 4000-8000MHz
Frequency range4000‑8000 MHz
Minimum order quantity1 PCS
Warranty1 year

Product overview

The Tatusky TTSK‑TZ‑KPG‑100W is a GaN microwave RF power amplifier module for anti-drone system integration, covering 4000‑8000 MHz. At the 25℃ ambient performance measurement condition, it delivers typical saturated output of 100W, adjustable output of 100‑150W and typical efficiency of 20%. Maximum gain reaches 45 dB under rated operating conditions. Its RF connections comprise an SMA-Female input and N-Female output. Standard input power is 5 dBm, with a maximum non-damaging input of ≤19 dBm at the same ambient measurement condition; excessive input can damage the hardware.

The module measures 170 × 78 × 24.5 mm and mounts with screws through a 164.4 × 72.5 mm pattern suitable for M3.0 × 10 steel screws. Installation requires a bottom-mounted heat sink with forced air cooling or a conductive heat sink. A 2.54mm 2*4 connector provides RS485 monitoring of temperature, current, voltage and RF output power, plus TTL configuration through digital sources. The supply requirement is ≥15A @32V DC for 100W continuous-wave output. Operating ambient temperature is -10℃ to +55℃; power stability of ±1.0 dB was tested over ‑40℃ to +55℃.

Specifications

SpecificationValue & conditions
ModelTatusky TTSK‑TZ‑KPG‑100W
Product architectureGaN-based microwave RF power amplifier module
Frequency band100W 4000-8000MHz
Frequency range4000‑8000 MHz
Minimum order quantity1 PCS
Warranty1 year
DC operating voltage28‑32V; typical value: 32VPerformance parameters measured at 25℃ ambient.
Maximum output power100WTypical @10.5A; performance parameters measured at 25℃ ambient.
Adjustable output power range100‑150W; typical saturated output power: 100WPerformance parameters measured at 25℃ ambient.
Output current range10‑13.5 APerformance parameters measured at 25℃ ambient.
Typical amplifier efficiency20%Performance parameters measured at 25℃ ambient.
Maximum power gain45 dBRated operating condition; performance parameters measured at 25℃ ambient.
Standard input power5 dBmPerformance parameters measured at 25℃ ambient.
Maximum non-damaging input power≤19 dBmPerformance parameters measured at 25℃ ambient; avoid over-input to prevent hardware damage.
Output port VSWR≤2No-power network split test; performance parameters measured at 25℃ ambient.
Operating ambient temperature-10℃ ~ +55℃
Power stability±1.0 dBTested at ‑40℃ ~ +55℃.
Power supply requirement≥15A @32V DCFor 100W continuous-wave output.
Communication interfaceRS485 & TTL; 2.54mm 2*4 connector
RS485 monitoringTemperature, current, voltage and RF output power
TTL configurationFrequency band and output-power parametersConnection with digital sources.
RF input connectorSMA-Female
RF output connectorN-Female
Overall dimensions170 × 78 × 24.5 mm
Mounting hole dimensions164.4*72.5 mmFit for M3.0*10 steel screws.
Cooling requirementBottom-mount heat sinkForced air cooling or conductive heat sink.
Mounting methodScrew-fixed installation
Performance measurement temperature25℃25℃ ambient environment.
RF connector and frequency customizationCustom RF connectors or adjusted frequency rangesFor special test requirements.

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